PHI ADEPT-1010 D-SIMS
Overview
Long accepted as a tool for depth profiling thin films and insulating materials, Quadrupole
Dynamic SIMS (D-SIMS) has become the surface analysis method
of choice for characterizing ultra shallow implants used in semiconductor devices. Shrinking
device geometries require ultra-shallow, high dose implantation of intentional dopants such as
boron and arsenic and the use of thinner, highly controlled insulating layers (oxides and
oxynitrides). These critical processes of modern semiconductor device fabrication are ideally
suited to the analytical performance of Physical Electronics' ADEPT-1010 surface analysis
instrument.
The ADEPT-1010 dynamic SIMS analysis instrument employs a unique secondary ion extraction
system which provides high transmission with a quadrupole dynamic SIMS platform. High transmission
yields low detection limits offering routine analyses of implant junction depth and dose. These
critical factors in implantation can be measured with reproducibility of a few percent, consistent
with the needs of the semiconductor industry. In addition, the ADEPT-1010 surface analysis
instrument can be used to monitor the nitrogen content of nitrided oxides with thickness of 5nm
and less.
The ultra-high vacuum environment of the ADEPT-1010 allows for depth profiling of low
levels of oxygen and carbon in SiGe layers while maintaining excellent depth resolution and low
sputter rates. This capability is important to the integrity of these high speed SiGe devices.
The ADEPT-1010 includes a complete software system, SIMetric, for instrument control,
data acquisition, and data reduction. The instrument can be run in an automated data acquisition
mode without analyst intervention. This mode of operation yields high throughput and reproducible
results on batch samples run overnight or over extended time periods.
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