AVS 66th International Symposium and Exhibition

Physical Electronics is happy to be a sponsor at the AVS 66th International Symposium and Exhibition in Columbus, Ohio.

Along with our Booth (#500), Physical Electronics will have many talks and posters being presentated throughout the week. Below you can find a schedule of the presentations being given:

 Monday, Oct. 21, 10:40 AM, AS - “Misinterpretations in the Spectroscopic Analysis of Heterogeneous Materials and Defected Structures”, L. Swartz

Tuesday, Oct. 22, 2:00 PM, Exhibitor Talks - “What’s New at PHI”, J. Newman

Tuesday, Oct. 22, 5:00 PM, AS - “Characterization of Electronic Materials using Low Energy Inverse Photoemission Spectroscopy”, B. Schmidt

Thursday, Oct. 24, 8:40 AM, AS - ”TOF-SIMS Tandem MS Imaging of (Sub-)Monolayer Coatings for Device Processing”, D.M.Carr

Thursday, Oct. 24, 12:00 PM, AS - “Multi-technique Surface Analysis of Graphenes”, K. Artyushkova

Thursday Post Session - “Using AES, EDS, and FIB to Detect, Identify, and Image Buried Metallic Particles”, A. Ellsworth

Thursday Poster Session - “XPS, TOF-SIMS, and AES Analysis of Fresh and Aged Alumina-Supported Silver Catalysts”, J. Newman

PHI Lunch n Learn Event - Wednesday, Oct. 23, 12:30-1:30 PM

WHO: John Newman
WHAT: Beyond the Surface: Design and Applications of a New Laboratory-Based Scanning XPS/HAXPES Instrument
WHERE: Hyatt Regency Hotel - Delaware Room A

X-ray Photoelectron Spectroscopy (XPS) is a widely used surface analysis technique with many well established industrial and research applications. The surface sensitivity (top 5-10 nm) of XPS and its ability to provide short-range chemical bonding information make the technique extremely popular in materials characterization and failure analysis laboratories.  In some instances, an increased depth of analysis is desired over what can be obtained using XPS.  Sputter etching can be performed to analyze below the surface; however, sputtering can often damage the chemistry of interest. An alternative is to use Hard X-ray Photoelectron Spectroscopy (HAXPES), traditionally only available at some synchrotron facilities.  HAXPES utilizes X-rays typically defined as having energies greater than 5 keV. Depending on the energy used, these hard X-rays can provide depths of analysis 3 or more times that of soft x-rays used on conventional XPS systems. HAXPES measurements are therefore more sensitive to the bulk, and contributions from the surface are minimized.

This presentation will describe a newly developed laboratory-based instrument, the PHI Quantes, equipped with two scanning microprobe monochromated X-ray sources, Al Kα (1486.6 eV) and Cr Kα (5414.9 eV), thus enabling both traditional XPS and HAXPES experiments in the same instrument.  Probing multiple depths of analysis without sputter etching opens new capabilities for probing the composition of buried layers and interfaces. A variety of applications showing the utility of combining the two X-ray sources will be shown.

This Lunch n Learn opportunity will be limited to 40 participants, first come first serve. If you'd like to attend, please respond quickly to reserve your spot at our event!

Please reply to Ben Ellefson to reserve your spot at the event and stop by Booth 500 on Monday or Tuesday before the event to pick up your ticket! bellefson@phi.com

Short course “Essentials of Accurate and Reliable Surface Analysis using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES)”: taught by K. Artyushkova, Wednesday, register: https://avsny.wufoo.com/forms/m1gb3gy81659xg6/

More information will become available as we near the event, but please visit the AVS 66 website to find information now.

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© 2024 Physical Electronics, Inc. (PHI) All Rights Reserved.