Introduction to TOF-SIMS Depth Profiling Webinar

presented by Dr. Andrew Giordani, Staff Scientist

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a well-known surface analysis technique for providing elemental and molecular information from the sample surface (10-20 Å). However, over the past 25 years, TOF-SIMS has evolved to become a powerful depth profiling technique by utilizing multiple ion beams and parallel detection of all secondary ions to provide chemical information as a function of depth into the sample. One of the unique capabilities of TOF-SIMS is the ability to perform a dual-beam depth profile by separating the analysis beam from the sputter ion beam. The dual-beam approach allows the analysis ion beam to operate at high energy for high spatial resolution and the sputter ion beam (removing material) to operate at low energy for high depth resolution. TOF-SIMS can be equipped with a variety of ion beams, such as Binq+, Au nq+, C60q+, Ga+, O2+, Cs+, Ar+, and large gas cluster Ar for analysis or sputtering for various materials applications. The flexibility of TOF-SIMS makes it a valuable tool to investigate a wide range of materials from the surface to micrometers into the sample.

In this webinar the fundamentals TOF-SIMS depth profiling will be introduced, along with applications to demonstrate how TOF-SIMS depth profiling can be used in materials characterization.

Register HERE

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© 2024 Physical Electronics, Inc. (PHI) All Rights Reserved.