Seminar series on characterization "TOF-SIMS: Introduction and Materials Applications"

“Making the Best of a Bad Situation: A Characterization Seminar Series”

"TOF-SIMS: Introduction and Materials Applications" given by Physical Electronics Staff Scientist Andrew Giordani

Fri, April 24, 11:00am – 12:15pm

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a powerful analytical technique that can provide elemental and molecular information with high sensitivity from the sample surface to tens of microns into the sample. Additionally, TOF-SIMS can produce chemical images with high spatial resolution (<70 nm). This is achieved by utilizing a variety of ion beams to either analyze (Bin+, Au n+, C60+, Ga+), sputter (O2+, Cs+, Ar+, large gas cluster Ar), or mill (Ga+) the sample. The most recent advancement in TOF-SIMS is the capability of MS-MS which enables confident molecular identification. The flexibility of TOF-SIMS makes it a valuable tool to investigate a wide range of materials. This presentation will cover the basics, discuss ion beams and MS-MS, and show materials applications.

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© 2024 Physical Electronics, Inc. (PHI) All Rights Reserved.