ADXPS and Single Spectrum Thickness Calculations

Angle-dependent XPS (ADXPS) is a non-destructive way to probe chemical compositions of thin-film structures at different sampling depths.

ADXPS has multiple advantages over destructive sputter depth profiling. It provides chemical information which can be compromised by ion beam-induced damage; it can be applied to ultra-thin films and ion-beam damage-sensitive materials.

One of the goals of angle-dependent measurement is thin film thickness measurement and depth profile reconstruction.

StrataPHI is a software product for estimating the structure of thin-film stacks from spectral and angle-dependent XPS and HAXPES data. StrataPHI calculates thickness for thin-film structures composed of discrete layers. For multi-layer samples with unique chemistry in each layer, the thickness can be calculated from a single spectral data set.

Updated features and improved functionalities include:

  • Estimating the structure of thin film from HAXPES data with new Cr RSF database
  • Choice of Inelastic Mean Free Path (IMFP)/Effective Attenuation Length (EAL) methods
  • Smart Processing Record tracks model setup and saves optimized structure for future analysis and sharing among users
  • Support of Auger transitions
  • Support of Fractional Stoichiometry in layer definition
  • Improved output for batch processing
  • Improved Attenuation Length Database Editor Interface
  • Attenuation Length (AL) Database Editor can be used to calculate AL using any of the IMFP/EAL methods for multiple X-ray sources
  • New functionality for creation of ANG and PRO files from group of individual SPE files


  • Multi-layer thin film thickness and composition
  • Adventitious carbon thickness
  • Surface coverage (atoms/cm2)
  • High-throughput metrology tool for thin-film structures

Figure 1 . Graphical User Interface

Figure 2. Thickness of thicker layers can be accurately obtained from angle-dependent HAXPES data. Cr X-ray source gives access to Hf 3d avoiding overlap between Hf 4f and N2s transitions. Accurate quantification for all layers is obtained by using experimental RSF quantification parameters.

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© 2023 Physical Electronics, Inc. (PHI) All Rights Reserved.
© 2023 Physical Electronics, Inc. (PHI) All Rights Reserved.