To discuss a project or to request a quote, please contact PHI at analysis@phi.com or call us at 518-650-1892 (8 AM-5 PM CST).
XPS/HAXPES Surface Analysis
Unlock detailed surface and subsurface insights with PHI’s advanced X-ray photoelectron spectroscopy (XPS) and hard X-ray photoelectron spectroscopy (HAXPES) capabilities. Our PHI Quantes XPS/HAXPES Scanning Microprobe instrument delivers high-resolution elemental and chemical-state information from the top 1–10 nm of a material’s surface, and up to 30 nm with HAXPES.
With dual X-ray sources (Al Kα and Cr Kα) and integrated sputter ion guns, we offer both non-destructive and depth-profiling analysis for complex film structures and buried interfaces
Learn more about the XPS and HAXPES techniques.
XPS and HAXPES Analytical Services
- Quantification of elements and chemical states of up to 10 nm (XPS) and 30 nm (HAXPES) below a material’s surface
- Angle-resolved analysis for non-destructive multi-layer film thickness measurement (AR-XPS and AR-HAXPES)
- Inert sample transfer vessel for air-sensitive samples
- Monoatomic argon (Ar+) depth-profiling for thin films > 10 nm
- Argon gas cluster ion beam (GCIB) cleaning for surface contamination removal
- GCIB depth-profiling optimized for organics, inorganics, and hybrid materials
Example XPS Output – Thin Film Thickness on Medical Device
Example HAXPES Output – Buried Layer in Semiconductor Device
In this example, conventional XPS analysis does not detect the silicon substrate using the Si 2 p signal while HAXPES detects the deeply buried silicon substrate using Si 1s.
Instrument Used for XPS Analytical Services
- Analysis area of up to 1350 µm x 1350 µm
- Selectable X-ray beam size between 7.5 µm and 200 µm
- Maximum sample size of 75 mm x 75 mm x 20 mm
- Sample must be solid and compatible with ultra-high vacuum (no liquid)
- Sample tilting from 5º to 90º take-off angle for grazing-angle analysis and subsurface depth-profiling
PHI Quantes XPS/HAXPES Scanning Microprobe
Working Principle of XPS Technique
