Contract Analytical Services

Physical Electronics (PHI), the premier name in surface analysis offers analytical services using our state-of-the-art instruments. Our scientists have a deep knowledge of surface analysis applications and problem solving, and the benefit of always having access to the latest instrument technology. It is a winning combination to help you tackle your most challenging production, R&D, and engineering issues.

To discuss a particular project or to request a quote, please contact PHI at analysis@phi.com or 952-828-6410

Common Applications

  • Materials properties engineering and validation
  • Surface defects and contamination
  • Failure analysis and process control
  • Coatings and interfaces
  • Thickness and composition
  • Nanomaterials and thin films structural characterization  
  • Metrological application
  • Competitive analysis                                                                                                         

XPS - X-Ray Photoelectron Spectroscopy

  • Quantification and chemical state analysis
  • Multiple ion beams available for optimized depth profiling of organics, inorganics and mixed materials
  • Angle-dependent analysis for thin film characterization
  • Inert gas sample transfer for air sensitive samples
  • Electronic band structure analysis
  • In-situ heating and cooling
  • In-situ sample biasing experiments
  • Also available: C60 ion and argon gas cluster ion (GCIB) sputter depth profiling

HAXPES - Hard X-Ray Photoelectron Spectroscopy

  • Quantification and chemical state analysis from 3 times the depth of XPS for probing thicker film structures and buried interfaces
  • Same are XPS and HAXPES analysis
  • Multiple ion beams available for optimized depth profiling of both organic and inorganic materials
  • Inert gas sample transfers for air sensitive samples

AES - Auger Electron Spectroscopy

  • PHI 710 field emission Auger system with analytical spatial resolution < 8 nm                                                                                 
  • Surface sensitive compositional analysis
  • Ion sputter depth profiling
  • In-situ sample fracturing
  • In-situ cryogenic sample fracturing
  • Focused Ion Beam (FIB)
  • Energy Dispersive X-ray Spectroscopy (EDS)                                                                                                                                                                                                 

TOF-SIMS - Time-of-Flight Secondary Ion Mass Spectrometry

  • PHI nanoTOF II TOF-SIMS Analysis with <70 nm spatial resolution 
  • Surface sensitive molecular imaging and trace analysis
  • Multiple ion beams available for optimized depth profiling of organics, inorganics and mixed materials                                            
  • In-situ Focused Ion Beam (FIB) cross-sectioning
  • Tandem mass (MS/MS) analysis for unambiguous peak identification
  • In-situ sample heating and cooling

All techniques also offer the option of inert gas transfer of samples from a dry glove box to the instruments without exposure to air.

To discuss a particular project or to request a quote, please contact PHI at analysis@phi.com or 952-828-6410.

"PHI was an extremely valuable resource for our investigations into a major issue in some of our products.  PHI's TOF-SIMS studies helped us nail down exactly which film was compromised.  Armed with that information, we managed to successfully address the problem, and PHI was a significant contributor to that success."  

- Semiconductor Contract Customer -

18725 Lake Drive East, Chanhassen, MN 55317
© 2024 Physical Electronics, Inc. (PHI) All Rights Reserved.
© 2024 Physical Electronics, Inc. (PHI) All Rights Reserved.