Article

Unlocking Nanoscale Insights with Auger Electron Spectroscopy

Surface Analysis Spotlight: AES

	by Cesar Saucedo Staff Scientist

Key Highlights

• Sub-10 nm spatial resolution enables highly localized surface and near-surface chemical analysis.
• AES provides exceptional surface sensitivity, making it ideal for advanced materials characterization and failure analysis.
• Depth profiling capabilities reveal compositional changes through multilayer structures and semiconductor features.
• Elemental mapping of semiconductor vias provides insights into material distribution and electrical contact performance.
• High-resolution grain boundary analysis enables direct observation of compositional variations in metallurgical systems.
• Integrated AES, FIB, and EDS workflows deliver a comprehensive understanding of both surface and subsurface defects.
• Multi-technique analysis accelerates problem-solving across semiconductor and advanced materials applications.

Auger Electron Spectroscopy (AES) is a powerful surface analysis technique that delivers sub-10 nm spatial resolution for investigating complex materials and device structures. When integrated with complementary techniques such as Focused Ion Beam (FIB) milling and Energy Dispersive X-ray Spectroscopy (EDS), AES provides a comprehensive approach to nanoscale characterization, compositional analysis, and failure investigation across semiconductor and metallurgical applications.

In this work, AES is applied to semiconductor and metallurgical systems to better understand composition and failure analysis. A semiconductor via was analyzed to investigate how material composition influences the electrical contact behavior. After removing the passivation layer using a monoatomic Ar⁺ ion gun, AES depth profiling and elemental mapping revealed compositional variations throughout the via structure and provided insight into changes occurring across sputter cycles. AES was also used to study grain boundary chemistry in steel. Following in-situ cooling and fracture, high-resolution imaging and elemental mapping enabled direct observation of compositional variations at grain boundaries and inclusions, highlighting the technique’s ability to resolve microstructural features at the nanoscale.

To demonstrate the strength of a multi-technique approach that couples AES with additional options such as EDS and FIB.  These three techniques were used to identify the composition and true structure of a buried particle defect observed within passivated aluminum. Together, these methods illustrate how integrating complementary techniques can provide a more complete understanding of complex materials systems. For more information on how AES, FIB and EDS, can enable advanced nanoscale characterization and failure analysis, please join us for Dr. Cesar Saucedo’s presentation “Using Auger Electron Spectroscopy to Advance Nanoscale Characterization” at ECASIA 26 on Friday, Sept 18 at 11:30 AM.

Figure 1: Via sputter profile. Small area analysis was done on a via that was sputter profiles and elements where monitored.

Figure 2: Fractured sample. Elemental mapping on a transgraular fracture was monitored.